dmp10 80 ucb4 document number: ds3 5827 rev. 5 - 2 1 of 6 www.diodes.com may 2015 ? diode s incorporated dmp10 80 ucb4 p - channel enhancement mode mosfet product summary (typ. @ v gs = - 4.5v , t a = +25c) v dss r ds(on) q g q gd i d - 12 v 65 m 2 . 5 nc 0 . 6 nc - 3.3 a descriptio n this new generation mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? battery management ? load switch ? battery protection features ? ld - mos technology with the lowest figure of merit: r ds( on ) = 65 m ? to minimize on - state losses q g = 2 . 5 nc for ultra - fast s witching ? v gs(th) = - 0. 6 v typ. for a low turn - on potential ? csp with footprint 1. 0 mm 1. 0 mm ? height = 0.6 2 mm for low profile ? esd = 3 kv hbm protection of gate ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? ca se: u - wlb1010 - 4 ? terminal connections: see diagram below ? weight: 0.0018 grams ( a pproximate ) ordering information (note 4 ) part number case packaging dm p10 80 ucb4 - 7 u - wlb1010 - 4 3 , 000/tape & reel notes: 1. no purpose ly added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d u - wlb1010 - 4 top view equivalent circuit b w = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) u - wlb1010 - 4 esd protected to 3kv s d g d b w y m
dmp10 80 ucb4 document number: ds3 5827 rev. 5 - 2 2 of 6 www.diodes.com may 2015 ? diode s incorporated dmp10 80 ucb4 maximum ratings (@ t a = +25c, unless otherwise specified.) chara cteristic symbol value unit drain - source voltage v dss - 12 v gate - source voltage v gss - 6 v continuous drain current (note 5 ) v gs = - 4.5v steady state t a = + 25c t a = + 70 c i d - 3 . 3 - 2.7 a continuous drain current (note 5 ) v gs = - 2.5v stea dy state t a = + 25c t a = + 70 c i d - 3 . 0 - 2 . 4 a pulsed drain current (note 6 ) i dm 20 a thermal characteristics characteristic symbol value unit power dissipation (note 7 ) p d 0.82 w thermal resistance, junction to ambient @t a = + 25c (note 7 ) r ja 150 c/w thermal resistance, junction to case @t c = + 25c (note 7 ) r j c 42.66 c/w power dissipation (note 5 ) p d 1.59 w thermal resistance, junction to ambient @t a = + 25c (note 5 ) r ja 80.29 c/w operating and storage temperature ran ge t j , t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown volta ge bv dss - 12 - - v v gs = 0v, i d = - 250a g ss - 6.0 - - v v d s = 0v, i g = - 250a j = + 25c i dss - - - 1 ? ds = - 9.6 v, v gs = 0v gate - source leakage i gss - - - 1 00 n a v gs = - 6 v, v ds = 0v on characteristics (note 8 ) gate thresh old voltage v gs(th) - 0.4 - 0.6 - 1.0 v v ds = v gs , i d = - 250 a ds (on) - 65 8 0 m gs = - 4.5v, i d = - 500ma - 77 93 v gs = - 2.5v, i d = - 500ma - 1 08 1 30 v gs = - 1. 5 v, i d = - 500ma forward transfer admittance |y fs | - 4 - s v ds = - 6 v, i d = - 500ma diode forward voltage v sd - 0. 6 - 1.0 v v gs = 0v, i s = - 500ma reverse recovery charge q rr - 2.0 - nc v dd = C f = C 00a/s rr - 9.5 - ns dynamic characteristics (note 9 ) input capacita nce c iss - 213 35 0 pf v ds = - 6 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 119 2 50 reverse transfer capacitance c rss - 54.4 9 0 total gate charge q g - 2.5 5 nc v gs = - 4.5 v, v ds = - 6 v, i d = - 500m a gate - source charge q gs - 0.3 - gate - drain cha rge q gd - 0.6 - gate charge at vth q g (th) - 0.15 - turn - on delay time t d(on) - 16.7 - ns v d s = - 6 v, v gs = - 2.5 v, r g = 20 d = - 500ma turn - on rise time t r - 20.6 - turn - off delay time t d(off) - 38.4 - turn - off fall time t f - 28.4 - notes: 5 . device mounted on fr4 material with 1 - inch 2 (6.45 - cm 2 ), 2 - oz. (0.071 - mm thick) cu . 6 . repetitive rating, pulse width limit ed by junction temperature. 7. device mounted on fr - 4 pcb with minimum recommended pad layout, single sided. 8 . short duration pulse test used to minimize self - heating effect . 9 . guaranteed by design. not subject to production testing.
dmp10 80 ucb4 document number: ds3 5827 rev. 5 - 2 3 of 6 www.diodes.com may 2015 ? diode s incorporated dmp10 80 ucb4 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 -v , drain -source voltage (v) fig. 1 typical output characteristics ds - i , d r a i n c u r r e n t ( a ) d v = -1.0v gs v = -1.2v gs v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -3.0v gs v = -4.0v gs v = -4.5v gs v = -6.0v gs 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 - i , d r a i n c u r r e n t ( a ) d -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.18 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.10 0.20 0 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? -i , drain source current (a) fig. 3 typical on-resistance vs. drain current and gate voltage d v = -6.0v gs v = -4.5v gs v = -2.5v gs v = -1.5v gs 0.04 0.06 0.08 0 1 2 3 4 5 0.10 -i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs 0.6 0.8 1.2 1.4 1.6 1.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 5 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = -4.5v i = -2.0a gs d v = -2.5v i = -1.5a gs d 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.10 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -4.5v i = a gs d -2.0 v = 5v i = a gs d -2. -1.5
dmp10 80 ucb4 document number: ds3 5827 rev. 5 - 2 4 of 6 www.diodes.com may 2015 ? diode s incorporated dmp10 80 ucb4 0.2 0.4 0.6 0.8 1.2 1.0 0 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 7 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) -i = 1ma d -i = 250a d 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 -v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s t = 25 c a ? t = -55 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? 0 1 2 3 4 5 6 7 8 9 10 11 12 0.1 10 100 1,000 100,000 - i , l e a k a g e c u r r e n t ( n a ) d s s 10,000 1 -v , drain-source voltage (v) fig. 9 typical drain-source leakage current vs. voltage ds t = 150c a t = 125c a t = 85c a t = 25c a 0.1 1 10 100 -v , drain-source voltage (v) fig. 10 soa, safe operation area ds 0.01 0.1 1 10 100 - i , d r a i n c u r r e n t ( a ) d t = 150c t = 25c j(max) a v = -6v single pulse gs dut on 1 * mrp board r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10 s w 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 11 transient thermal resistance r (t) = r(t) * r r = 153c/w duty cycle, d = t1/ t2 ?? ? ja ja ja 0.001 0.01 0.1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 1 d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse
dmp10 80 ucb4 document number: ds3 5827 rev. 5 - 2 5 of 6 www.diodes.com may 2015 ? diode s incorporated dmp10 80 ucb4 package outline dimension please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. u - wlb1010 - 4 dim min max typ d 0.95 1.05 1.00 e 0.95 1.05 1.00 a ? ? ? a2 ? ? b 0.25 0.35 0.30 e ? ? sd ? ? se ? ? all dimensions in mm dimensions value (in mm) c 0.50 d 0.25 c c ? d e d a2 a sd e se e 4x-? b
dmp10 80 ucb4 document number: ds3 5827 rev. 5 - 2 6 of 6 www.diodes.com may 2015 ? diode s incorporated dmp10 80 ucb4 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limi ted to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvemen ts, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither doe s diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diod es incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unaut horized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expens es, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreig n patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the e nglish version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failur e to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system wh ose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of th eir life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life su pport devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising o ut of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
|
